Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
Release time:2019-10-24
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- Affiliation of Author(s):
- 集成电路学院
- Journal:
- Chinese Physics B
- All the Authors:
- linzhaojun
- First Author:
- 曹芝芳
- Indexed by:
- 综合研究
- Document Code:
- lw-145401
- Volume:
- 22
- Issue:
- 4
- Translation or Not:
- no
- Date of Publication:
- 2012-08-01