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Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
AIP Advances
All the Authors:
linzhaojun
First Author:
于英霞
Indexed by:
综合研究
Document Code:
lw-145406
Volume:
3
Translation or Not:
no
Date of Publication:
2013-09-16