Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- AIP Advances
- First Author:
- 于英霞
- All the Authors:
- 林兆军
- Document Code:
- lw-145406
- Volume:
- 3
- Translation or Not:
- No
- Date of Publication:
- 2013-09
- Release Time:
- 2019-10-24