Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors
Release time:2019-10-24
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- JOURNAL OF APPLIED PHYSICS
- All the Authors:
- linzhaojun
- First Author:
- 栾崇彪
- Indexed by:
- 综合研究
- Document Code:
- lw-164536
- Volume:
- 116
- Issue:
- 4
- Number of Words:
- 3
- Translation or Not:
- no
- Date of Publication:
- 2014-09-06