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Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
JOURNAL OF APPLIED PHYSICS
All the Authors:
linzhaojun
First Author:
栾崇彪
Indexed by:
综合研究
Document Code:
lw-164536
Volume:
116
Issue:
4
Number of Words:
3
Translation or Not:
no
Date of Publication:
2014-09-06