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Analysis of interface trap states in InAlN/AlN/GaN heterostructures

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Semiconductor Science and Technology
All the Authors:
linzhaojun
First Author:
周阳
Indexed by:
综合研究
Document Code:
lw-164543
Volume:
29
Number of Words:
2
Translation or Not:
no
Date of Publication:
2014-08-01