Analysis of interface trap states in InAlN/AlN/GaN heterostructures
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Analysis of interface trap states in InAlN/AlN/GaN heterostructures
- Journal:
- Semiconductor Science and Technology
- First Author:
- 周阳
- All the Authors:
- 林兆军
- Document Code:
- lw-164543
- Volume:
- 29
- Number of Words:
- 2
- Translation or Not:
- No
- Date of Publication:
- 2014-08
- Release Time:
- 2019-10-24