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Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Modern Physics Letters B
All the Authors:
linzhaojun
First Author:
刘艳
Indexed by:
综合研究
Document Code:
lw-183665
Volume:
30
Issue:
35
Page Number:
1650411
Translation or Not:
no
Date of Publication:
2016-11-20