Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors
- Journal:
- Journal of Semiconductors
- First Author:
- 栾崇彪
- All the Authors:
- 林兆军
- Document Code:
- lw-164593
- Volume:
- 35
- Issue:
- 9
- Number of Words:
- 2
- Translation or Not:
- No
- Date of Publication:
- 2014-01
- Release Time:
- 2019-10-24
- Prev One:Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors
- Next One:A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors