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Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Journal of Semiconductors
All the Authors:
linzhaojun
First Author:
栾崇彪
Indexed by:
综合研究
Document Code:
lw-164593
Volume:
35
Issue:
9
Number of Words:
2
Translation or Not:
no
Date of Publication:
2014-01-20