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Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
?Superlattices and Microstructures
All the Authors:
linzhaojun,Cheng Aijie
First Author:
cuipeng
Indexed by:
综合研究
Document Code:
lw-183661
Volume:
100
Page Number:
358
Translation or Not:
no
Date of Publication:
2016-09-29