Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
Release Time:2019-10-24
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- Institution:
- 集成电路学院
- Title of Paper:
- Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
- Journal:
- ？Superlattices and Microstructures
- First Author:
- 崔鹏
- All the Authors:
- 林兆军,程爱杰
- Document Code:
- lw-183661
- Volume:
- 100
- Page Number:
- 358
- Translation or Not:
- No
- Date of Publication:
- 2016-09
- Release Time:
- 2019-10-24
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