Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
Release Time:2019-10-24
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- Institution:
- 集成电路学院
- Title of Paper:
- Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
- Journal:
- APPLIED PHYSICS LETTERS
- First Author:
- 赵景涛
- All the Authors:
- 林兆军
- Document Code:
- lw-173290
- Volume:
- 105
- Translation or Not:
- No
- Date of Publication:
- 2014-08
- Release Time:
- 2019-10-24