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Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
APPLIED PHYSICS LETTERS
All the Authors:
linzhaojun
First Author:
赵景涛
Indexed by:
综合研究
Document Code:
lw-173290
Volume:
105
Translation or Not:
no
Date of Publication:
2014-08-25