Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors
Release Time:2019-10-24
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- Institution:
- 集成电路学院
- Title of Paper:
- Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors
- Journal:
- Chinese Physics B
- First Author:
- 杨铭
- All the Authors:
- 林兆军
- Document Code:
- lw-173326
- Volume:
- 24
- Issue:
- 11
- Page Number:
- 117103
- Translation or Not:
- No
- Date of Publication:
- 2015-10
- Release Time:
- 2019-10-24
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