Paper Publications

Home

Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

Release time:2019-10-24
Hits:
Affiliation of Author(s):
集成电路学院
Journal:
Chinese Physics B
All the Authors:
linzhaojun
First Author:
杨铭
Indexed by:
综合研究
Document Code:
lw-173326
Volume:
24
Issue:
11
Page Number:
117103
Translation or Not:
no
Date of Publication:
2015-10-09