Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
- Journal:
- IEEE Transactions on Electron Devices
- First Author:
- 杨铭
- All the Authors:
- 林兆军
- Document Code:
- lw-183660
- Volume:
- 63
- Issue:
- 10
- Page Number:
- 3908
- Translation or Not:
- No
- Date of Publication:
- 2016-08
- Release Time:
- 2019-10-24