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Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Superlattices and Microstructures
All the Authors:
linzhaojun
First Author:
杨铭
Indexed by:
综合研究
Document Code:
lw-173310
Volume:
85
Page Number:
43
Translation or Not:
no
Date of Publication:
2015-05-15