Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
Release time:2019-10-24
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- Affiliation of Author(s):
- 集成电路学院
- Journal:
- Chinese Physics B
- All the Authors:
- linzhaojun
- First Author:
- cuipeng
- Indexed by:
- 综合研究
- Document Code:
- B77CB16F9B4B4F9ABB3EBB10DEAE1AD4
- Volume:
- 26
- Issue:
- 12
- Translation or Not:
- no
- Date of Publication:
- 2017-12-01