Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors
Release Time:2019-10-24
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- Institution:
- 数学学院
- Title of Paper:
- Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors
- Journal:
- Superlattices and Microstructures
- First Author:
- 刘欢
- All the Authors:
- 程爱杰,林兆军
- Document Code:
- F9BB185E29D949D494A8B8F21346A6EF
- Volume:
- 103
- Page Number:
- 113
- Translation or Not:
- No
- Date of Publication:
- 2017-03
- Release Time:
- 2019-10-24