Paper Publications

Home

Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors

Release time:2019-10-24
Hits:
Affiliation of Author(s):
数学学院
Journal:
Superlattices and Microstructures
All the Authors:
Cheng Aijie,linzhaojun
First Author:
liuhuan
Document Code:
F9BB185E29D949D494A8B8F21346A6EF
Volume:
103
Page Number:
113
Translation or Not:
no
Date of Publication:
2017-03-01