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Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
IEEE Transactions on Electron Devices
All the Authors:
linzhaojun,Cheng Aijie
First Author:
cuipeng
Indexed by:
综合研究
Document Code:
E2988FC1A9E8447E954EB10F064D7460
Volume:
64
Issue:
3
Page Number:
1038
Translation or Not:
no
Date of Publication:
2017-03-01