Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors
Release Time:2019-10-24
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- Institution:
- 集成电路学院
- Title of Paper:
- Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors
- Journal:
- Scientific Reports
- First Author:
- 崔鹏
- All the Authors:
- 程爱杰,林兆军
- Document Code:
- 6F146E0EDCBB4D39A65CB09F15ACC5F7
- Volume:
- 8
- Translation or Not:
- No
- Date of Publication:
- 2018-01
- Release Time:
- 2019-10-24