Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors
Release time:2019-10-24
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- Affiliation of Author(s):
- 集成电路学院
- Journal:
- JOURNAL OF APPLIED PHYSICS
- All the Authors:
- linzhaojun
- First Author:
- cuipeng
- Indexed by:
- 综合研究
- Document Code:
- F23E801B38C847F2A09CFE3045EEA09F
- Volume:
- 122
- Issue:
- 12
- Translation or Not:
- no
- Date of Publication:
- 2017-09-28