Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
Release Time:2019-10-25
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
- Journal:
- Applied Physics A-Materials Science & Processing
- First Author:
- 崔鹏
- All the Authors:
- 林兆军
- Document Code:
- 23FFF41320F243FFAFA50330D569F6BB
- Volume:
- 124
- Issue:
- 5
- Translation or Not:
- No
- Date of Publication:
- 2018-05
- Release Time:
- 2019-10-25