Paper Publications

Home

Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors

Release time:2019-10-25
Hits:
Affiliation of Author(s):
集成电路学院
Journal:
Applied Physics A-Materials Science & Processing
All the Authors:
linzhaojun
First Author:
cuipeng
Indexed by:
综合研究
Document Code:
23FFF41320F243FFAFA50330D569F6BB
Volume:
124
Issue:
5
Translation or Not:
no
Date of Publication:
2018-05-01