Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
Release Time:2019-10-25
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- Institution:
- 集成电路学院
- Title of Paper:
- Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
- Journal:
- Scientific Reports
- First Author:
- 崔鹏
- All the Authors:
- 林兆军,程爱杰
- Document Code:
- F2AA78930D604001BBE2CDBB7272ED00
- Volume:
- 8
- Translation or Not:
- No
- Date of Publication:
- 2018-06
- Release Time:
- 2019-10-25