Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
Release time:2019-10-25
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- Affiliation of Author(s):
- 集成电路学院
- Journal:
- Scientific Reports
- All the Authors:
- linzhaojun,Cheng Aijie
- First Author:
- cuipeng
- Indexed by:
- 综合研究
- Document Code:
- F2AA78930D604001BBE2CDBB7272ED00
- Volume:
- 8
- Translation or Not:
- no
- Date of Publication:
- 2018-06-13