Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs
Release Time:2019-10-25
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs
- Journal:
- Scientific Reports
- First Author:
- 崔鹏
- All the Authors:
- 程爱杰,林兆军
- Document Code:
- E7C0F50A9F8C4498BFABA944F654DD32
- Volume:
- 8
- Translation or Not:
- No
- Date of Publication:
- 2018-08
- Release Time:
- 2019-10-25

