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Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs

Release time:2019-10-25
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Affiliation of Author(s):
微电子学院
Journal:
scientific reports
All the Authors:
Cheng Aijie,linzhaojun
First Author:
cuipeng
Indexed by:
综合研究
Document Code:
E7C0F50A9F8C4498BFABA944F654DD32
Volume:
8
Translation or Not:
no
Date of Publication:
2018-08-27