Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs
Release time:2019-10-25
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- IEEE Transactions on Electron Devices
- All the Authors:
- linzhaojun
- First Author:
- 杨铭
- Indexed by:
- 综合研究
- Document Code:
- lw-183656
- Volume:
- 63
- Issue:
- 4
- Page Number:
- 1471
- Translation or Not:
- no
- Date of Publication:
- 2016-03-22