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Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Release time:2019-10-25
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Affiliation of Author(s):
集成电路学院
Journal:
IEEE Transactions on Electron Devices
All the Authors:
linzhaojun
First Author:
杨铭
Indexed by:
综合研究
Document Code:
lw-183656
Volume:
63
Issue:
4
Page Number:
1471
Translation or Not:
no
Date of Publication:
2016-03-22