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Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor

Release time:2019-10-25
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Affiliation of Author(s):
微电子学院
Journal:
Journal of applied physics
All the Authors:
linzhaojun
First Author:
杨铭
Indexed by:
综合研究
Document Code:
lw-183658
Volume:
119
Issue:
22
Page Number:
224501
Translation or Not:
no
Date of Publication:
2016-06-10