Paper Publications

Home

Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

Release time:2021-12-08
Hits:
Affiliation of Author(s):
集成电路学院
Journal:
AIP ADVANCES
First Author:
杨勇雄
Document Code:
654962E1CCCB40D78A9DD5E0B5E4D883
Volume:
11
Issue:
8
Translation or Not:
no
Date of Publication:
2021-08-01