Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method
Release Time:2021-12-08
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method
- Journal:
- AIP ADVANCES
- First Author:
- 杨勇雄
- Document Code:
- 654962E1CCCB40D78A9DD5E0B5E4D883
- Volume:
- 11
- Issue:
- 8
- Translation or Not:
- No
- Date of Publication:
- 2021-08
- Release Time:
- 2021-12-08