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The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors

Release time:2021-12-08
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Affiliation of Author(s):
集成电路学院
Journal:
Physica E-Low-Dimensional Systems & Nanostructures
First Author:
姜光远
Document Code:
5F0FB0BBE00D44A9B4CAA42287AA8F94
Volume:
127
Translation or Not:
no
Date of Publication:
2021-03-01