The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
Release Time:2021-12-08
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- Institution:
- 集成电路学院
- Title of Paper:
- The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors
- Journal:
- Physica E-Low-Dimensional Systems & Nanostructures
- First Author:
- 姜光远
- Document Code:
- 5F0FB0BBE00D44A9B4CAA42287AA8F94
- Volume:
- 127
- Translation or Not:
- No
- Date of Publication:
- 2021-03
- Release Time:
- 2021-12-08
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