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The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length

Release time:2021-12-10
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Affiliation of Author(s):
集成电路学院
Journal:
Solid-State Electronics
First Author:
姜光远
Document Code:
94E9CD5E7CC5456FA0960D195E9C7814
Volume:
186
Issue:
1
Translation or Not:
no
Date of Publication:
2021-12-01