The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length
Release Time:2021-12-10
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length
- Journal:
- Solid-State Electronics
- First Author:
- 姜光远
- Document Code:
- 94E9CD5E7CC5456FA0960D195E9C7814
- Volume:
- 186
- Issue:
- 1
- Translation or Not:
- No
- Date of Publication:
- 2021-12
- Release Time:
- 2021-12-10