The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors
Release Time:2021-12-09
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- Institution:
- 集成电路学院
- Title of Paper:
- The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors
- Journal:
- Applied Physics A: Materials Science and Processing
- First Author:
- 姜光远
- Document Code:
- 8E2B42A7A9A340699B997751BCA7C3E7
- Volume:
- 127
- Issue:
- 6
- Translation or Not:
- No
- Date of Publication:
- 2021-05
- Release Time:
- 2021-12-09