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The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors

Release time:2021-12-09
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Affiliation of Author(s):
集成电路学院
Journal:
Applied Physics A: Materials Science and Processing
First Author:
姜光远
Document Code:
8E2B42A7A9A340699B997751BCA7C3E7
Volume:
127
Issue:
6
Translation or Not:
no
Date of Publication:
2021-05-27