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Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures

Release time:2022-05-18
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Affiliation of Author(s):
集成电路学院
Journal:
MICROELECTRONIC ENGINEERING
First Author:
Liu, Yan
Document Code:
656B4BB74E7F450FB095031DB857F9DF
Volume:
247
Translation or Not:
no
Date of Publication:
2021-07-15