Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures
Release Time:2022-05-18
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- Institution:
- 集成电路学院
- Title of Paper:
- Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures
- Journal:
- MICROELECTRONIC ENGINEERING
- First Author:
- Liu, Yan
- Document Code:
- 656B4BB74E7F450FB095031DB857F9DF
- Volume:
- 247
- Translation or Not:
- No
- Date of Publication:
- 2021-07
- Release Time:
- 2022-05-18