A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate
Release time:2022-05-18
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- AIP ADVANCES
- First Author:
- 刘阳
- Document Code:
- F147A487D4CC4E0BA94FF1162268E7B5
- Volume:
- 12
- Issue:
- 2
- Translation or Not:
- no
- Date of Publication:
- 2022-02-01