Study of electrical transport properties of GaN-based side-gate heterostructure transistors
Release time:2022-12-13
Hits:
- Affiliation of Author(s):
- 微电子学院
- Journal:
- Applied Physics Letters
- First Author:
- 周衡
- Document Code:
- F21FE017C09E49068D2EF4356497F757
- Issue:
- 21
- Number of Words:
- 3
- Translation or Not:
- no
- Date of Publication:
- 2022-11-22