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Study of electrical transport properties of GaN-based side-gate heterostructure transistors

Release time:2022-12-13
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Affiliation of Author(s):
微电子学院
Journal:
Applied Physics Letters
First Author:
周衡
Document Code:
F21FE017C09E49068D2EF4356497F757
Issue:
21
Number of Words:
3
Translation or Not:
no
Date of Publication:
2022-11-22