Study of electrical transport properties of GaN-based side-gate heterostructure transistors
Release Time:2022-12-13
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Study of electrical transport properties of GaN-based side-gate heterostructure transistors
- Journal:
- APPLIED PHYSICS LETTERS
- First Author:
- 周衡
- Document Code:
- F21FE017C09E49068D2EF4356497F757
- Issue:
- 21
- Number of Words:
- 3
- Translation or Not:
- No
- Date of Publication:
- 2022-11
- Release Time:
- 2022-12-13