Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT
Release Time:2023-11-13
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT
- Journal:
- IEEE Electron Device Letters
- First Author:
- 王鸣雁
- Document Code:
- 4B0DEB3F96FA4996984DC4990B4D40E1
- Issue:
- 12
- Number of Words:
- 3
- Translation or Not:
- No
- Date of Publication:
- 2023-10
- Release Time:
- 2023-11-13
- Prev One:Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack
- Next One:Study on the frequency characteristics of split-gate AlGaN/GaN HFETs