Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT
Release time:2023-11-13
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- IEEE Electron Device Letters
- First Author:
- 王鸣雁
- Document Code:
- 4B0DEB3F96FA4996984DC4990B4D40E1
- Issue:
- 12
- Number of Words:
- 3
- Translation or Not:
- no
- Date of Publication:
- 2023-10-05
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