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Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT

Release time:2023-11-13
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Affiliation of Author(s):
集成电路学院
Journal:
IEEE Electron Device Letters
First Author:
王鸣雁
Document Code:
4B0DEB3F96FA4996984DC4990B4D40E1
Issue:
12
Number of Words:
3
Translation or Not:
no
Date of Publication:
2023-10-05