Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack
Release Time:2024-05-17
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- Institution:
- 新一代半导体材料研究院
- Title of Paper:
- Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack
- Journal:
- SOLID-STATE ELECTRONICS
- First Author:
- Jiang, Guangyuan
- Document Code:
- 33733E2B9BFF407EB865DA65E98904F1
- Volume:
- 201
- Number of Words:
- 4000
- Translation or Not:
- No
- Date of Publication:
- 2023-03
- Release Time:
- 2024-05-17