Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs
Release time:2024-11-21
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- IEEE ACCESS
- First Author:
- 王鸣雁
- Document Code:
- 8C0EF47C110A46B4AA20B60BD11A564F
- Issue:
- 12
- Number of Words:
- 3000
- Translation or Not:
- no
- Date of Publication:
- 2024-01-16
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