Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs
Release Time:2024-11-21
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs
- Journal:
- IEEE ACCESS
- First Author:
- 王鸣雁
- Document Code:
- 8C0EF47C110A46B4AA20B60BD11A564F
- Issue:
- 12
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2024-01
- Release Time:
- 2024-11-21
- Prev One:Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors
- Next One:Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack