Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors
Release Time:2024-11-21
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors
- Journal:
- Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics
- First Author:
- 周衡
- Document Code:
- F7E2B76E46924C88A705718E160C7E29
- Issue:
- 212
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2023-11
- Release Time:
- 2024-11-21