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Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors

Release time:2024-11-21
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Affiliation of Author(s):
集成电路学院
Journal:
Guti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics
First Author:
周衡
Document Code:
F7E2B76E46924C88A705718E160C7E29
Issue:
212
Number of Words:
3000
Translation or Not:
no
Date of Publication:
2023-11-03