Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer
Release Time:2024-12-09
Hits:
- Institution:
- 新一代半导体材料研究院
- Title of Paper:
- Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer
- Journal:
- APPLIED PHYSICS LETTERS
- First Author:
- 罗鑫
- Document Code:
- 1843556233512062977
- Volume:
- 125
- Issue:
- 12
- Number of Words:
- 4000
- Translation or Not:
- No
- Date of Publication:
- 2024-09
- Release Time:
- 2024-12-09