High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V
Release Time:2024-12-19
Hits:
- Institution:
- 新一代半导体材料研究院
- Title of Paper:
- High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V
- Journal:
- IEEE Electron Device Letters
- First Author:
- 陈思衡
- Document Code:
- CFFF4E6B36CF438F85A95FA554A9E105
- Volume:
- 12
- Issue:
- 45
- Page Number:
- 2343
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2024-12
- Release Time:
- 2024-12-19