Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes
发布时间:2019-04-13
点击次数:
- 所属单位:
- 物理学院
- 发表刊物:
- Chinese Physics B
- 第一作者:
- 林兆军
- 论文类型:
- 基础研究
- 论文编号:
- lw-133530
- 卷号:
- 21
- 期号:
- 1
- 页面范围:
- 017103-1
- 是否译文:
- 否
- 发表时间:
- 2012-01-05
- 上一条:A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
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