Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
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所属单位:物理学院
发表刊物:Journal of applied physics
全部作者:孟令国
第一作者:林兆军
论文类型:基础研究
论文编号:lw-137932
卷号:112
页面范围:054513
是否译文:否
发表时间:2012-09-14
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