Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs
发布时间:2024-11-21
点击次数:
- 所属单位:
- 集成电路学院
- 发表刊物:
- IEEE ACCESS
- 第一作者:
- 王鸣雁
- 论文编号:
- 8C0EF47C110A46B4AA20B60BD11A564F
- 期号:
- 12
- 字数:
- 3000
- 是否译文:
- 否
- 发表时间:
- 2024-01-16
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