中文

In-Situ Loading Bridgman Growth of Mg3Bi1.49Sb0.5Te0.01 Bulk Crystals for Thermoelectric Applications

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:Advanced Electronic Materials

  • First Author:王琦琦

  • Document Code:5EFAEAA49A5A4C3E8558F2D832FAD54A

  • Volume:8

  • Issue:4

  • Page Number:2101125

  • Number of Words:5

  • Translation or Not:no

  • Date of Publication:2022-04-10

  • Date of Publication:2022-04-10

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