Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors
Release Time:2019-10-24
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors
- Journal:
- IEEE Transactions on Electron Devices
- First Author:
- 杨乐陶
- All the Authors:
- Xijian Zhang,Li Yuxiang,陈秀芳,徐现刚,Song A M,赵显
- Indexed by:
- Applied Research
- Document Code:
- C378AC35A5AB4595ADA7AFF720512A91
- Volume:
- 64
- Issue:
- 4
- Page Number:
- 1846
- Translation or Not:
- No
- Date of Publication:
- 2017-04
- Release Time:
- 2019-10-24