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Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors

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Affiliation of Author(s):微电子学院

Journal:IEEE Transactions on Electron Devices

All the Authors:zhangxijian,Li Yuxiang,chenxiufang,xuxiangang,Song A M,zhaoxian

First Author:杨乐陶

Indexed by:Applied Research

Document Code:C378AC35A5AB4595ADA7AFF720512A91

Volume: 64

Issue:4

Page Number:1846

Translation or Not:no

Date of Publication:2017-04-01

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