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Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

Release Time:2019-10-24
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Institution:
微电子学院
Title of Paper:
Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric
Journal:
Applied physics letters
First Author:
Pengfei Ma,马鹏飞
Correspondence Author:
Yuxiang Li,Aimin Song
All the Authors:
Song A M,Li Yuxiang,辛倩,王一鸣,Lulu Du,Yiming Wang,Qian Xin
Indexed by:
Applied Research
Document Code:
CC8950350E17457388301840E2318F53
Volume:
112
Issue:
2
Translation or Not:
No
Date of Publication:
2018-01
Release Time:
2019-10-24