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肖洪地.Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an exampleJOURNAL OF ALLOYS AND COMPOUNDS :162069,2021.
刘杰.Eu-doped Lu2O3 epitaxial films with an embedded nanoporous GaN distributed Bragg reflectors. CERAMICS INTERNATIONAL Journal, 47:22693,2021.
乐永.Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates. MATERIALS LETTERS Journal, 302,2021.
栾彩娜.Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD. Journal of Materials Science: Materials in Electronics, 32:21798,2021.
乐永.Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates. MATERIALS LETTERS Journal, 302,2021.
赵冲冲.Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror. VACUUM Journal, 182,2020.
王迪.Characterization of single crystal beta-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD. CERAMICS INTERNATIONAL Journal, 46:4568,2020.
何林安.Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates. JOURNAL OF THE AMERICAN CERAMIC SOCIETY Journal, 103:2555,2020.
王迪.Effect of Ta doping on the properties of beta-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates. Journal of Materials Science: Materials in Electronics, 32:2757,2021.
马瑾.Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD. Materials Research Bulletin, 47:253,2012.

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Paper Publications

肖洪地.Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an exampleJOURNAL OF ALLOYS AND COMPOUNDS :162069,2021.

刘杰.Eu-doped Lu2O3 epitaxial films with an embedded nanoporous GaN distributed Bragg reflectors. CERAMICS INTERNATIONAL Journal, 47:22693,2021.

乐永.Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates. MATERIALS LETTERS Journal, 302,2021.

栾彩娜.Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD. Journal of Materials Science: Materials in Electronics, 32:21798,2021.

乐永.Characterization and synthesis of cubic Zn2TiO4 crystalline films deposited on MgAl2O4 (100) substrates. MATERIALS LETTERS Journal, 302,2021.

赵冲冲.Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror. VACUUM Journal, 182,2020.

王迪.Characterization of single crystal beta-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD. CERAMICS INTERNATIONAL Journal, 46:4568,2020.

何林安.Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates. JOURNAL OF THE AMERICAN CERAMIC SOCIETY Journal, 103:2555,2020.

王迪.Effect of Ta doping on the properties of beta-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates. Journal of Materials Science: Materials in Electronics, 32:2757,2021.

马瑾.Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD. Materials Research Bulletin, 47:253,2012.