一种正交结构氧化锡单晶薄膜的制备方法
Release time:2019-01-26
Hits:
- Affilication of Author(s):
- 物理学院
- Disigner of the Invention:
- Ma Jin
- Application Number:
- 201010011442.8
- Number of Inventors:
- 2
- Service Invention or Not:
- no
- Application Date:
- 2010-01-14
- Pre One:一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法