一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法
Release Time:2019-04-15
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- Title:
- 一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法
- Institution:
- 集成电路学院
- Type of Patent:
- Invent
- Application Number:
- 201710551026.9
- Number of Inventors:
- 2
- Service Invention or Not:
- No
- Application Date:
- 2017-07-07
- Publication Date:
- 2019-10-01
- Authorization Date:
- 2019-10-01
- Release Time:
- 2019-04-15
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