一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法
Release time:2019-04-15
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- Affilication of Author(s):
- 微电子学院
- Type of Patent:
- 发明
- Application Number:
- 201710551026.9
- Number of Inventors:
- 2
- Service Invention or Not:
- no
- Application Date:
- 2017-07-07
- Publication Date:
- 2019-10-01
- Authorization Date:
- 2019-10-01
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