一种在钇掺杂氧化锆衬底上制备立方结构氧化铟单晶薄膜的方法
Release time:2019-04-15
Hits:
- Affilication of Author(s):
- 物理学院
- Patent Applicant:
- luancaina
- Type of Patent:
- 发明
- Application Number:
- 201010141341.2
- Number of Inventors:
- 2
- Service Invention or Not:
- no
- Application Date:
- 2010-04-08
- Publication Date:
- 2011-06-01
- Authorization Date:
- 2011-06-01
- Pre One:一种在氧化镁衬底上制备单斜晶型氧化镓单晶薄膜的方法
- Next One:一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法