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一种可调制带隙宽度的镓铟氧化物薄膜及其制备方法

Release time:2019-04-15
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Affilication of Author(s):
物理学院
Patent Applicant:
Ma Jin,luancaina
Type of Patent:
发明
Application Number:
200810015687.0
Number of Inventors:
2
Service Invention or Not:
no
Application Date:
2008-04-14
Publication Date:
2009-12-30
Authorization Date:
2009-12-30