Title : beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD

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Affiliation of Author(s):微电子学院

Title of Paper:beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD

Journal:Materials Science in Semiconductor Processing

All the Authors:xiaohongdi,Feng Xianjin,Ma Jin

First Author:曹琼

Indexed by:Unit Twenty Basic Research

Document Code:3891A01B92C44DCAAD07D31EC88B3B5F

Volume:77

Page Number:58

Translation or Not:no

Date of Publication:2018-04-01