Title : Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates

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Affiliation of Author(s):微电子学院

Title of Paper:Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates

Journal:Cermics International

First Author:肖洪地

Indexed by:Applied Research

Document Code:686BD4C0C2214A248DAA9ADC14D17DAE

Issue:47

Page Number:9597

Number of Words:4

Translation or Not:no

Date of Publication:2021-01-01