Paper Publications
Title of Award : Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates
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Institution:集成电路学院
Title of Paper:Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates
Journal:Ceramics International
First Author:肖洪地
Document Code:686BD4C0C2214A248DAA9ADC14D17DAE
Issue:47
Page Number:9597
Number of Words:4
Translation or Not:No
Date of Publication:2021-01
Release Time:2022-01-18