Patents
Title of Award : 一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法
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Title:一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法
Institution:微电子学院
Type of Patent:发明
Application Number:201710551026.9
Number of Inventors:2
Service Invention or Not:No
Application Date:2017-07-07
Publication Date:2019-10-01
Authorization Date:2019-10-01
Release Time:2019-01-26