Patents
Title of Award : 一种正交结构氧化锡单晶薄膜的制备方法
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Title:一种正交结构氧化锡单晶薄膜的制备方法
Institution:物理学院
Type of Patent:Invent
Application Number:201010011442.8
Number of Inventors:2
Service Invention or Not:No
Application Date:2010-01-14
Publication Date:2011-11-23
Authorization Date:2011-11-23
Release Time:2019-04-15