Title : 一种可调制带隙宽度的镓铟氧化物薄膜及其制备方法
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Title:一种可调制带隙宽度的镓铟氧化物薄膜及其制备方法
Affilication of Author(s):物理学院
Patent Applicant:luancaina,Ma Jin
Type of Patent:发明
Application Number:200810015687.0
Number of Inventors:2
Service Invention or Not:no
Application Date:2008-04-14
Publication Date:2009-12-30
Authorization Date:2009-12-30
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